Structure info
Layer group p-6m2
Layer group number 78
Structure origin original03-18
Stability
Energy above convex hull [eV/atom] 0.060
Heat of formation [eV/atom] -1.450
Dynamically stable Yes
Basic properties
Magnetic state NM
Band gap [eV] 1.556
Band gap (HSE06) [eV] 2.472
Band gap (G₀W₀) [eV] 3.851
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 3.133 0.000 0.000 Yes
2 -1.566 2.713 0.000 Yes
3 0.000 0.000 19.012 No
Lengths [Å] 3.133 3.133 19.012
Angles [°] 90.000 90.000 120.000

Ga2O2 (2GaO-1)
Heat of formation [eV/atom] -1.45
Energy above convex hull [eV/atom] 0.06
Monolayers from C2DB
Ga4O6, (2Ga2O3-1) -1.76 eV/atom
Ga2O2, (2GaO-1) -1.45 eV/atom
Ga2O2, (2GaO-2) -1.45 eV/atom
Ga2O4, (2GaO2-1) -1.08 eV/atom
GaO2, (1GaO2-1) -0.92 eV/atom
Ga2O2, (2GaO-3) -0.91 eV/atom
Ga2O2, (2GaO-4) -0.81 eV/atom
Ga4, (4Ga-1) 0.16 eV/atom
Bulk crystals from OQMD123
Ga4O6 -1.81 eV/atom
Ga4 0.00 eV/atom
O8 0.00 eV/atom

Cij (N/m) xx yy xy
xx 139.36 56.21 0.00
yy 55.68 139.19 0.01
xy 0.00 0.00 85.76
Stiffness tensor eigenvalues
Eigenvalue 0 83.33 N/m
Eigenvalue 1 85.76 N/m
Eigenvalue 2 195.22 N/m

AB/2GaO/1/phonon_bs.png
Property Value
Minimum eigenvalue of Hessian [eV/Ų] -0.00

DVB (eV) xx yy xy
Γ 5.25 5.23 0.00
M 3.99 7.93 -3.36
K 4.18 4.16 0.00
kVBM 6.53 5.94 0.90
xx yy xy
Band Gap -8.52 -7.95 -0.90
DCB (eV) xx yy xy
Γ -1.99 -2.01 0.00
M 6.75 3.72 2.56
K 7.11 7.08 0.00
kCBM -1.99 -2.01 0.00

DOS BZ

VBM
Property (VBM) Value
Min eff. mass 3.13 m0
Max eff. mass 5.33 m0
DOS eff. mass 4.09 m0
Crystal coordinates [0.190, 0.190]
Warping parameter -0.001
Barrier height > 12.2 meV
Distance to barrier > 0.0231 Å-1
CBM
Property (CBM) Value
Min eff. mass 0.33 m0
Max eff. mass 0.33 m0
DOS eff. mass 0.33 m0
Crystal coordinates [0.000, -0.000]
Warping parameter 0.000
Barrier height > 232.8 meV
Distance to barrier > 0.023 Å-1

AB/2GaO/1/hse-bs.png
Property Value
KVP: Band gap (HSE06) [eV] 2.47
KVP: Direct band gap (HSE06) [eV] 3.27
Valence band maximum wrt. vacuum level (HSE06) -7.79 eV
Conduction band minimum wrt. vacuum level (HSE06) -5.32 eV

AB/2GaO/1/gw-bs.png
Property Value
Band gap (G₀W₀) [eV] 3.85
Direct band gap (G₀W₀) [eV] 4.39
Valence band maximum wrt. vacuum level (G₀W₀) -8.37 eV
Conduction band minimum wrt. vacuum level (G₀W₀) -4.52 eV

ZGaij ux uy uz
Px 2.44 -0.00 -0.00
Py -0.00 2.44 0.00
Pz -0.00 -0.00 0.50
ZOij ux uy uz
Px -2.44 -0.00 0.00
Py -0.00 -2.44 -0.00
Pz -0.00 0.00 -0.50
ZGaij ux uy uz
Px 2.44 -0.00 0.00
Py -0.00 2.44 -0.00
Pz 0.00 0.00 0.50
ZOij ux uy uz
Px -2.44 -0.00 -0.00
Py -0.00 -2.44 0.00
Pz 0.00 -0.00 -0.50

AB/2GaO/1/shg1.png
Element Relations
yyy yyy=-xxy=-yxx=-xyx
Others 0=xxx=xxz=xyy=xyz=xzx=xzy=xzz=yxy=yxz=yyx=yyz=yzx= yzy=yzz=zxx=zxy=zxz=zyx=zyy=zyz=zzx=zzy=zzz
AB/2GaO/1/shg2.png

AB/2GaO/1/rpa-pol-x.png AB/2GaO/1/rpa-pol-z.png
AB/2GaO/1/rpa-pol-y.png
Properties
Static interband polarizability at (x) [Å] 2.196
Static interband polarizability at (y) [Å] 2.196
Static interband polarizability at (z) [Å] 0.390
Plasma frequency (x) [Å0.5] 0.000
Plasma frequency (y) [Å0.5] 0.000

AB/2GaO/1/ir-pol-x.png AB/2GaO/1/ir-pol-z.png
AB/2GaO/1/ir-pol-y.png
Static polarizability [Å]
Phonons only (x) 1.72
Phonons only (y) 1.71
Phonons only (z) 0.08
Total (phonons + electrons) (x) 3.92
Total (phonons + electrons) (y) 3.91
Total (phonons + electrons) (z) 0.47

AB/2GaO/1/Raman.png
Mode Frequency (1/cm) Degeneracy
Mode 1 0. 3
Mode 2 70.3 2
Mode 3 201.1 1
Mode 4 487.8 1
Mode 5 511.2 1
Mode 6 529.1 4

AB/2GaO/1/absx.png
Property Value
The exciton binding energy from the Bethe–Salpeter equation (BSE) [eV]. 1.29
AB/2GaO/1/absz.png

# Chemical symbol Charges [|e|]
0 Ga 1.17
1 Ga 1.22
2 O -1.19
3 O -1.19

cij (e/Ådim-1) xx yy xy
x -0.00 -0.00 0.02
y 0.04 -0.04 -0.00
z 0.00 0.00 -0.00
cclampedij (e/Ådim-1) xx yy xy
x -0.00 -0.00 -0.37
y -0.37 0.37 -0.00
z -0.00 -0.00 -0.00

Shift-current
Element Relations
yyy yyy=-xyx=-yxx=-xxy
Others 0=xxx=xxz=xyy=xyz=xzx=xzy=xzz=yxy=yxz=yyx=yyz=yzx= yzy=yzz=zxx=zxy=zxz=zyx=zyy=zyz=zzx=zzy=zzz

Miscellaneous details
Unique ID 2GaO-1
Number of atoms 4
Number of species 2
Formula Ga2O2
Reduced formula GaO
Stoichiometry AB
Unit cell area [Å2] 8.500
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/tree/AB/GaO/Ga2O2-16c96094d1a0
Old uid Ga2O2-16c96094d1a0
Inversion symmetry No
Layer group p-6m2
Layer group number 78
Structure origin original03-18
Band gap [eV] 1.556
gap_dir 2.067
gap_dir_nosoc 2.068
Vacuum level [eV] 3.733
Fermi level [eV] -2.602
minhessianeig -0.000
Dynamically stable Yes
Band gap (HSE06) [eV] 2.472
gap_dir_hse 3.271
vbm_hse -4.061
cbm_hse -1.590
Miscellaneous details
Band gap (G₀W₀) [eV] 3.851
gap_dir_gw 4.388
vbm_gw -4.637
cbm_gw -0.785
E_B 1.288
Static interband polarizability at (x) [Å] 2.196
Static interband polarizability at (y) [Å] 2.196
Static interband polarizability at (z) [Å] 0.390
Static polarizability (phonons) (x) [Å] 1.721
Static polarizability (phonons + electrons) (x) [Å] 3.917
Static polarizability (phonons) (y) [Å] 1.714
Static polarizability (phonons + electrons) (y) [Å] 3.910
Static polarizability (phonons) (z) [Å] 0.083
Static polarizability (phonons + electrons) (z) [Å] 0.472
Plasma frequency (x) [Å0.5] 0.000
Plasma frequency (y) [Å0.5] 0.000
Energy [eV] -21.857
Magnetic state NM
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Energy above convex hull [eV/atom] 0.060
Heat of formation [eV/atom] -1.450
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