| Formula | In4Ga4As8 |
| Reduced formula | InGaAs2 |
| Stoichiometry | ABC2 |
| Number of species | 3 |
| Number of atoms | 16 |
| Unique ID | 14 |
| Unit cell volume [Å3] | 407.411 |
| E-hull [eV] | 0.028 |
| Kohn Sham band gap [eV] | 0.200 |
| Effective electron mass [me] | 0.086 |
| Effective hole mass [me] | -0.978 |
| Derivative discontinuity (GLLB-SC) [eV] | 0.070 |
| Energy per atom [eV] | 0.019 |
| Uncertanty of the convex hull energy [eV] | 0.021 |
| Uncertanty of the total energy [eV] | 0.008 |
| Direct band gap (GLLB-SC) [eV] | 0.270 |
| Indirect band gap (GLLB-SC) [eV] | 0.270 |
| Direct band gap (TB09) [eV] | 0.910 |
| Indirect band gap (TB09) [eV] | 0.910 |
| Crystal system | Orthorhombic |
| Phase | ST |
| Short chemical formula | GaInAs2 |
| Total energy (mBEEF) [eV] | -1427.817 |
| Energy [eV] | -1427.817 |